منابع مشابه
Intrinsic Defects in Semiconductors
In all previous consideration of crystal structure and crystal growth, for simplicity it has been assumed that the silicon crystal lattice is entirely free of defects. Of course, in reality, this cannot be true since at any temperature greater than absolute zero, no crystal of finite size can be absolutely perfect. Indeed, there are a number of different types of defects that can exist within t...
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In this research, cobalt and nickel sulfide nanoparticles (NPs) were grown on AlMCM-41 matrix by using ion exchange method. The prepared samples were irradiated by thermalized neutron that emitted from Am-Be source up to fluencies (7.9+E9n/cm2). After that, X-ray diffraction (XRD), UV-Vis spectroscopy, Fourier transform...
متن کاملPositron Spectroscopy of Defects in Semiconductors
At a vacant lattice cell positron-ion repulsion is reduced leading to positron trapping. This causes observable changes in annihilation characteristics: the positron lifetime increases and the positron-electron momentum distribution narrows. Positron trapping in semiconductors is analogous to carrier capture. Due to the long-range Coulomb interaction, the charge state of a vacancy has a strong ...
متن کاملDefects in Amorphous Semiconductors: Amorphous Silicon
Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between defect phenomena in crystalline and amorphous hosts are described, and the special importance of the electron–phonon coupling is stressed. Detailed calculations for amorphous Si are presented using accurate first principles (density-functional) tech...
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ژورنال
عنوان ژورنال: Materia Japan
سال: 1996
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.35.130